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▲ control deposition distance and angle that improve film quality ▲ Five groups of 2" magnetron sputtering source that provide material select ▲ With transfer chamber of substrate make timesaving for process ▲ Full automatic deposition system and high quality film ▲ PLC design and fool-proofing ▲ Uniformity on 3" wafer ＜±3% ▲ Design a number of process with customer include of metal sputtering/reactive sputtering/modified/clean...etc |
format
| chamber |
1. material: polished steel (SUS304) 2. chamber size: 500(W)mmX500(H)mmX500(D)mm 3. type: U shape 4. Manual front door (contain view port) |
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holder rotation mechanism |
1. substrate speed rate: Max: 19rpm 2. 3" waferX1 |
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heating capacity |
1. Max: 800℃ |
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sputtering system |
1. Φ3"sputter gunX4, with shutter for each group 2. sputtering direction : face down 3. deposition distance: adjustable |
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pumping capacity
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1. chamber pressure within 40 mins ＜5.0X10-6 Torr 2. final vacuum: ＜5.0X10-7Torr |
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Intake |
1. Ar MFC flow controllers 2. N2 MFC flow controllers 3. O2 MFC flow controllers |
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operating system |
1. With PLC control system and color HMI 2. control mode: automatic/semiautomatic |
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vacuum sensor system |
1. total pressure vacuum gauge: 1ATM~10-9Torr 2. high vacuum pump backing gauge:1ATM~10-4Torr |
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transfer system |
1. chamber size:Φ150X150(H)mm 2. material: polished steel (SUS304) 3. substrate size: Max 4" 4. direction: vertical or horizontal
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