| ▲ With transfer chamber of substrate make timesaving for process |
| ▲ control deposition distance that improve film quality |
| ▲ Four groups of 3" magnetron sputtering source that provide material select |
| ▲ Full automatic system |
| ▲ PLC design and fool-proofing |
| ▲ Uniformity on 4" wafer ＜±3% |
| ▲ Design a number of process with customer include of metal sputtering/reactive sputtering/modified/clean...etc |
format
chamber |
1. material: polished steel (SUS304) 2. chamber size: 500(W)m/mX500(H)m/mX500(D)m/m 3. type: U shape 4. Manual front door (contain view port) |
holder rotation mechanism
|
1. revolution、rotation and same time action 2. Four-point locate control 3. Display and control rotation speed value 4. rotation speed Max: 20rpm revolution speed Max: 6rpm
|
heating capacity |
1. Max: 800℃ |
puttering system |
1. Φ3"sputter gunX4, with shutter for each group 2. RF power generator 3. DC power generator 4. sputtering direction : face down 5. sputtering distance: range of 4~10cm |
system pumping capacity |
1. chamber pressure within 40 mins ＜5.0X10-6 Torr 2. final pressure: ＜5.0X10-7Torr
|
Intake system |
1. Ar MFC flow controllers 2. N2 MFC flow controllers 3. O2 MFC flow controllers
|
operate system
|
1. With PLC control system and color HMI 2. control mode: automatic/semiautomatic
|
vacuum sensor system |
1. total pressure vacuum gauge: 1ATM~10-9Torr 2. high vacuum pump backing gauge:1ATM~10-4Torr
|
transfer system |
1. chamber size:Φ150X150(H)m/m 2. material: polished steel (SUS304) 3. substrate size: Max 4" 4. direction: vertical or horizontal
|